Current gain in bipolar transistors with a field plate over the base surface

نویسندگان

  • V. Anantharam
  • K. N. Bhat
چکیده

Vertical n-p-n and lateral p-n-p transistor structures of an integrated circuit are studied using an electrolytic tank analogue and it is shown that the presence of a proper field plate extending from the collector-base junction over most of the base surface will improve the current-gain factor considerably. Experimental results of the analogue study, simulating typical carrier lifetimes and typical overall dimensions, are presented with various geometrical dimensions as parameters.

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تاریخ انتشار 2009